Research Article
Calculation Method Based on Flower Petal Area and Other Plant Leaf Spot Area
Shengjian Ma*,
Jian Wang,
Junxian Guo
Issue:
Volume 9, Issue 6, December 2024
Pages:
129-135
Received:
9 October 2024
Accepted:
25 October 2024
Published:
12 November 2024
DOI:
10.11648/j.eas.20240906.11
Downloads:
Views:
Abstract: In order to calculate the area of irregular shapes such as plant leaves and diseased spots or flower petals, this paper presents a new method to calculate them by using flood fill algorithm, HSV color space, improved k-means algorithm and morphological operation. First, 501 butterfly petal images and pathological leaf images of Bauhinia and phyllotaxus were collected, and then flood was used Fill algorithm selects the disease-free area and records the selected pixel value. HSV color space conversion is applied to the image to facilitate the segmentation of leaves. Then, the improved k-means algorithm is used to extract the binary image of leaves and record the pixel value of the outer contour with morphological closed operation. Finally, the proportion and truth of the disease spots of plant leaves are obtained by calculating the pixel value and the real value of the rectangle in the sampling area Real area. Compared with the results of artificial labeling, the average accuracy of petal area and lesion area of Phalaenopsis was 96.3% and 96.61%, respectively. It can be seen that the program can calculate the area of irregular shape of plant surface accurately. In conclusion, this method can replace the artificial grid method to calculate the information of plant leaf area and disease proportion, and effectively reduce the work intensity of experimental personnel.
Abstract: In order to calculate the area of irregular shapes such as plant leaves and diseased spots or flower petals, this paper presents a new method to calculate them by using flood fill algorithm, HSV color space, improved k-means algorithm and morphological operation. First, 501 butterfly petal images and pathological leaf images of Bauhinia and phyllot...
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Research Article
Photovoltaic Performance Improvement of Dilute Nitrides GaAs1-xNx -Based Thin-Film Solar Cell Structure Using SCAPS-1D Software
Issue:
Volume 9, Issue 6, December 2024
Pages:
136-146
Received:
8 October 2024
Accepted:
12 November 2024
Published:
29 November 2024
DOI:
10.11648/j.eas.20240906.12
Downloads:
Views:
Abstract: The recent industrial revolution has increased the demand for the possible use of renewable energy sources to meet the World’s high energy requirements and to minimize the quantity of green-house gases (GHGs) in the atmosphere at once in a sustainable manner. Solar energy is one of the renewable energy sources that has garnered the most attention for sustainable energy production because it is ecologically benign, clean as well as widely available. The main issue with solar cells in comparison to traditional systems, however, continue to be their greater cost and efficiency restriction. It is anticipated that the issues will be resolved as the technology progresses as well as precious fabricating materials are used more. Dilute nitrides compound semiconductors, such as GaAs1-xNx, GaP1-xNx and GayIn1-yAs1-xNx have become promising materials because they have unique properties suitable for novel next generation optoelectronics especially photovoltaic applications. In addition, among dilute nitrides, GaAs1-xNx attracts much attention to the researchers because of its excellent absorption coefficients and charge-transport properties, which are importantly desirable for high efficiency solar cell. Therefore, in this research work, the thin-film solar cell’s performance metrics with dilute nitrides GaAs1-xNx as absorber layer were investigated by SCAPS-1D. The impacts of bandgap bowing and absorber layer’s thickness as well as operating temperatures, work functions of back-contact were evaluated to optimize open-circuited voltage (Voc), short-circuited current density (Jsc), fill-factor (FF) and efficiency (η). The absorber layer’s bandgap dependence performances study revealed that efficiency around 46% can be achieved with exceptional feasibilities such as lower density of as-grown defects and reliable lifetime by tuning bandgap to 0.82eV via adjusting nitrogen concentration in GaAs1-xNx. The assessment of performance for different absorber layer thicknesses showed that thickness around 2000nm is ideal for improving the suggested solar cell efficiency. Furthermore, higher efficiency and optimized other performance parameters obtaining at temperature 300K suggested that it is preferable to run the solar cell at that temperature to ensure steady-state functioning. Finally, it was explored by evaluating dependence of Voc, Jsc, FF and η on back-contact work functions at two bandgap energies of absorber layer that specially Jsc was dramatically influenced with changing bandgap of absorber layer. The research findings would be helpful for emerging renewable energy-based nanotechnology for reducing the world higher energy crisis and green-house gases at once in a sustainable manner.
Abstract: The recent industrial revolution has increased the demand for the possible use of renewable energy sources to meet the World’s high energy requirements and to minimize the quantity of green-house gases (GHGs) in the atmosphere at once in a sustainable manner. Solar energy is one of the renewable energy sources that has garnered the most attention f...
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,
Nuralam Howlader
